Semiconductor device with a contact plug connected to multiple interconnects formed within
AssigneeNEC Electronics Corporation
InventorsMichihiro Kobayashi, Hirofumi Nikaido, Nobuyuki Katsuki, Yasuhiro Kawakatsu
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Abstract
Two interconnect layers are electrically connected while reducing the number of manufacturing steps. A contact plug 9c which is formed into a beaded shape in a layer underlying two interconnects 11C and 11D and which also electrically connects the two interconnects 11C and 11D is included. The two interconnects 11C and 11D are separated to each other and are formed in a same layer. The contact plug 9c is simultaneously formed with a contact plug 9b to be connected to an interconnect 4b and a contact plug 9a to be connected to a source/drain region 6.
Claims5
A semiconductor device, comprising:
- a first region with Static Random Access Memory (SRAM) cells formed on a substrate thereof;
- a power supply hanging portion provided for a predetermined number of said SRAM cells;
- a second region between said first region and said power supply hanging portion;
- and
- an embedded interconnect, which electrically connects said first region to said power supply hanging portion, being continuous from said first region to said power supply hanging portion,
- said first region, said second region, and said supply power hanging portion being continuous and sequentially disposed in a direction horizontal to said substrate.
A semiconductor device, comprising:
- a contact plug formed into a beaded shape or a slit shape in a layer underlying two interconnects, said contact plug electrically connecting said two interconnects;
- and
- a metal-insulator-metal (MIM) capacitor element, said MIM capacitor element comprising:
- one of said two interconnects;
- a dielectric film disposed on said one of said two interconnects;
- and
- an electrode disposed on said dielectric film,
- wherein said dielectric film is disposed only on said one of said two interconnects, entirely in an upper layer of said interconnects, and
- wherein said electrode is disposed in a different layer than said other one of said two interconnects.
Dependencies are inferred from the claim text.