Electrically conductive path forming below barrier oxide layer and integrated circuit

An integrated circuit comprising:

• a first barrier oxide layer on a semiconductor substrate;
• a second barrier oxide layer over the first barrier oxide layer;
• a semiconductor layer between and completely separating the first barrier oxide layer and the second barrier oxide layer, a portion of the semiconductor layer entirely containing an electrically conductive path including a metal, wherein the semiconductor layer is located directly below the second barrier oxide layer;
• a semiconductor device above the electrically conductive path, the semiconductor device including a transistor;
• a plurality of contacts extending from the semiconductor device to the electrically conductive path, each of the plurality of contacts directly contacting a sidewall of the transistor;
• and
• a plurality of isolation regions entirely above the electrically conductive path, wherein the transistor is located between the plurality of isolation regions on a same level as the plurality of isolation regions, and wherein each of the plurality of contacts extends between and separates one of the plurality of isolation regions and the transistor.