Semiconductor device and method for fabricating semiconductor device

A semiconductor device, comprising:

• a contact plug electrically connected to a semiconductor substrate;
• a first barrier metal film with a columnar crystal structure arranged in contact with the semiconductor substrate at least on a bottom surface side of the contact plug;
• a second barrier metal film made of a material identical to that of the first barrier metal film and with a columnar crystal structure that is arranged on the bottom surface side and a side surface side of the contact plug and whose crystalline interface is shifted from that of the first barrier metal film;
• a metal containing film arranged in contact with the second barrier metal film and the contact plug on the bottom surface side and the side surface side of the contact plug;
• and
• a dielectric film arranged on the side surface side of the contact plug.

A method for fabricating a semiconductor device, comprising:

• forming a dielectric film above a semiconductor substrate;
• forming an opening cutting through to the semiconductor substrate in the dielectric film;
• forming a first barrier metal film with a columnar crystal structure in the opening;
• forming an amorphous film made of a material of the first barrier metal film by reforming a surface of the first barrier metal film;
• forming a second barrier metal film made of a material identical to that of the first barrier metal film and with a columnar crystal structure above the amorphous film in the opening;
• and
• depositing a contact plug material inside the opening after the second barrier metal film being formed.