Microelectronic device patterned by ablating and subsequently sintering said microelectronic device
AssigneeHewlett-Packard Development Company, L.P.
InventorsChinmay Betrabet, Curt Lee Nelson
Life of this patent
Estimating the term…
Abstract
A microelectronic device includes a non-polymeric substrate, an organic interlayer, and a indium tin oxide layer formed on the organic interlayer; the indium tin oxide layer including an ablated feature within said indium tin oxide layer, wherein said indium tin oxide layer is formed by an indium tin oxide solution that is laser ablated prior to sintering. Applicant respectfully submits that the above amendments bring the Abstract into compliance with MPEP §608.01 (b). Accordingly, Applicant respectfully requests reconsideration and withdrawal of the objection to the abstract.
Claims12
A method of manufacturing a micro electronic device, comprising:
- providing a non-polymeric substrate;
- forming an organic interlayer on said non-polymeric substrate;
- and
- forming an indium tin oxide layer directly on said organic interlayer, wherein said indium tin oxide layer is formed by an indium tin oxide solution that is laser ablated prior to sintering.
A method of forming a microelectronic device, comprising:
- providing a non-polymeric substrate;
- forming an indium tin oxide layer on said substrate;
- ablating a feature into said indium tin oxide layer;
- and
- wherein said indium tin oxide layer is formed by an indium tin oxide solution that is laser ablated prior to sintering.
Dependencies are inferred from the claim text.