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US 7,923,820 B2Granted
Method of producing a porous dielectric element and corresponding dielectric element
AssigneeSTMicroelectronics S.r.l.
InventorsSimon Jeannot, Laurent Favennec
Life of this patent
Estimating the term…
Abstract
A porous dielectric element is produced by forming a first dielectric and a second dielectric. The second dielectric is dispersed in the first dielectric. The second dielectric is then removed from the second dielectric by using a chemical dissolution. The removal of the second dielectric from the first dielectric leaves pores in the first dielectric. The pores, which are filled with air, improve the overall dielectric constant of the resulting dielectric element.
Claims17
Apparatus comprising:
- a porous dielectric element comprising a dielectric containing no silicon-oxygen bonds but having gas pockets dispersed in the dielectric, wherein the dielectric of the porous dielectric element is a dielectric formed of SixCyHz.
Apparatus comprising:
- a porous dielectric element comprising a dielectric containing no silicon-oxygen bonds but having gas pockets dispersed in the dielectric, wherein the dielectric of the porous dielectric element is a dielectric formed by SixCyHz, and wherein SixCyHzis dimethylphenylsilane.
Apparatus comprising:
- a porous dielectric element comprising a dielectric containing no silicon-oxygen bonds but having gas pockets dispersed in the dielectric formed by dissolution of a minor dielectric material phase dispersed within the dielectric of the porous dielectric element, wherein the minor dielectric material phase is of a SiwOxCyHz type that is removed in the dissolution by attacking silicon-oxygen bonds present in the minor dielectric material phase, and wherein the SiwOxCyHz type is tetraethylorthosilicate.
Apparatus comprising:
- a porous dielectric element comprising a dielectric containing no silicon-oxygen bonds but having gas pockets dispersed in the dielectric formed by dissolution of a minor dielectric material phase dispersed within the dielectric of the porous dielectric element, wherein the minor dielectric material phase is of a siloxane type that is removed in the dissolution by attacking silicon-oxygen bonds present in the minor dielectric material phase, and wherein the siloxane is of the decamethylcyclopentasiloxane type.
Dependencies are inferred from the claim text.