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US 7,923,819 B2Granted
Interlayer insulating film, wiring structure and electronic device and methods of manufacturing the same
AssigneesNational Iniversity Corporation Tohoku University, Tokyo Electron Limited
InventorsTadahiro Ohmi, Seiji Yasuda, Atsutoshi Inokuchi, Takaaki Matsuoka, Kohei Kawamura
Life of this patent
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Abstract
A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.
Claims16
A wiring structure comprising:
- an underlayer;
- an interlayer insulating film including a fluorocarbon film formed on the underlayer;
- and
- a conductor buried in the interlayer insulating film;
- wherein the fluorocarbon film contains nitrogen;
- and wherein the fluorocarbon film contains F and C in a ratio F/C within a range of 0.8 to 1.1 in an atomic ratio and contains nitrogen at a ratio of 0.1 to 10 atomic %.
3 more elements
A wiring structure comprising:
- an underlayer;
- an interlayer insulating film including a fluorocarbon film formed on the underlayer;
- and
- a conductor buried in the interlayer insulating film;
- wherein the fluorocarbon film contains nitrogen;
- wherein the fluorocarbon film is formed by CVD which is performed within at least one kind of gases including C and F together with a gas including N in plasma generated by the use of at least one of an Ar gas, an Xe gas, and a Kr gas;
- and wherein the gas including N contains one or both of an N2 gas and an NF3 gas.
4 more elements
A wiring structure comprising:
- an underlayer;
- an interlayer insulating film including a fluorocarbon film formed on the underlayer;
- and
- a conductor buried in the interlayer insulating film;
- wherein the fluorocarbon film contains nitrogen and has a thickness of 50 to 500 nm.
2 more elements
Dependencies are inferred from the claim text.