Semiconductor device having capacitor element

A semiconductor device comprising:

• a capacitor element comprising a flat-plate-type lower electrode provided over a semiconductor substrate, a flat-plate-type upper electrode provided over said lower electrode in parallel therewith, and a capacitor film provided between said lower electrode and said upper electrode;
• a first contact plug brought into contact with the bottom surface of said lower electrode, and is composed of a metal material;
• a first impurity-diffused layer provided in the surficial portion of said semiconductor substrate;
• a gate electrode provided over said semiconductor substrate, and on the lateral side of said first impurity-diffused layer;
• a second impurity-diffused layer provided in said semiconductor substrate on the lateral side of said gate electrode, while being opposed with said first impurity-diffused layer;
• a bit line provided over said semiconductor substrate;
• and
• a second contact plug connecting said bit line and said second impurity-diffused layer, and is composed of a copper-containing metal,
• wherein said capacitor film has a film which contains an organic molecule as a constituent,
• wherein said upper electrode comprises a first and second layer,
• wherein said first contact plug is brought into contact with said first impurity-diffused layer, and is composed of a copper-containing metal,
• wherein said capacitor element is provided more closer to said substrate than said bit line is,
• wherein a first region having said capacitor element and said bit line, and a second region having a first interconnect provided over said semiconductor substrate, are provided over said semiconductor substrate, and
• said bit line and said first interconnect are provided at the same level of height,
• said first region is arranged according to a lattice pattern, and said second region is not arranged according to the lattice pattern.