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US 7,923,808 B2Granted
Structure of very high insertion loss of the substrate noise decoupling
AssigneeInternational Business Machines Corporation
InventorsHanyi Ding, Kai D. Feng, Zhong-Xiang He, Xuefeng Liu
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Abstract
A structure includes a substrate comprising a region having a circuit or device which is sensitive to electrical noise. Additionally, the structure includes a first isolation structure extending through an entire thickness of the substrate and surrounding the region and a second isolation structure extending through the entire thickness of the substrate and surrounding the region.
Claims13
A method comprising:
- forming at least one via filled with a dielectric and at least one via filled with metal in a first surface of a substrate;
- removing a second surface portion of the substrate opposite the first surface of the substrate to expose at least a surface of the metal;
- and
- forming a metal layer in contact with at least the exposed surface of the metal to provide an electrical noise isolation area on the substrate.
1 more element
A method comprising:
- forming at least one via extending partially in a substrate and filled with a metal comprising one of copper and tungsten;
- forming at least one via extending partially in the substrate and filled with a dielectric comprising SiO2, an upper surface of the metal and the dielectric being exposed;
- removing a portion of the substrate to expose the metal and the dielectric at an end opposing the exposed surface of the metal and the dielectric;
- and
- forming a metal layer in contact with a surface of the substrate to contact the exposed end of the metal and the dielectric to provide an electrical noise isolation area on the substrate.
2 more elements
Dependencies are inferred from the claim text.