Semiconductor device having an insulator including an inductive load driving circuit
AssigneeKabushiki Kaisha Toshiba
InventorKazutoshi Nakamura
Life of this patent
Estimating the term…
Loading patent…
AssigneeKabushiki Kaisha Toshiba
InventorKazutoshi Nakamura
Estimating the term…
A semiconductor device comprises a semiconductor substrate of the first conductivity type. A well layer of the first conductivity type is selectively formed on the semiconductor substrate. A first diffused layer of the second conductivity type is selectively formed on the well layer. A second diffused layer of the second conductivity type is formed on the well layer apart from the first diffused layer. A control electrode is formed on an insulating film between the first diffused layer and the second diffused layer. A main electrode is formed on each of the first diffused layer and the second diffused layer. A first trench is formed in the semiconductor substrate surrounding the well layer. A third diffused layer of the second conductivity type is formed contacting to the first trench. The second diffused layer and the third diffused layer are electrically kept at the same potential.
A synchronous buck DC-DC converter comprising:
Dependencies are inferred from the claim text.