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US 7,923,804 B2Granted
Edge termination with improved breakdown voltage
AssigneeMaxPower Semiconductor, Inc.
InventorsJun Zeng, Mohamed N. Darwish, Shih-Tzung Su
Life of this patent
Estimating the term…
Abstract
A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field plate configuration operative to enhance any spreading of any depletion layer located at an edge of a main PN junction of the N-P-N sandwich structure.
Claims20
A semiconductor device, comprising:
- one or more active device segments;
- an edge termination structure, surrounding one or more of said active device segments;
- and
- multiple trench field plates, successively surrounding said edge termination and each other;
- wherein ones of said field plates are embedded in respective trenches, and wherein respective concentrations of a compensating dopant lie beneath said trenches.
2 more elements
A semiconductor device, comprising:
- one or more active device segments having a body junction therein;
- an edge termination structure, surrounding one or more of said active device segments, and including a sandwich structure having back-to-back junctions, of which one is approximately coplanar with said body junction;
- and
- one or more field plates, capacitively coupled to said edge termination structure.
1 more element
A method of operating a power semiconductor device, comprising the actions of:
- a) providing a desired current characteristic using one or more active device segments;
- while also simultaneously
- b) avoiding edge breakdown by using an edge termination structure, surrounding one or more of said active device segments, and multiple trench field plates, successively surrounding said edge termination and each other;
- wherein ones of said field plates are embedded in respective trenches, and wherein respective concentrations of a compensating dopant lie beneath said trenches.
1 more element
Dependencies are inferred from the claim text.