Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a first insulating layer over a substrate;
• a first single-crystalline semiconductor layer over the first insulating layer;
• a second insulating layer formed over the first single-crystalline semiconductor layer and the first insulating layer;
• and
• a second single-crystalline semiconductor layer which is formed over the second insulating layer;
• wherein a crystal plane orientation of the first single-crystalline semiconductor layer is different from a crystal plane orientation of the second single-crystalline semiconductor layer, and
• wherein a crystal axis in a channel length direction of the first single-crystalline semiconductor layer is different from a crystal axis in a channel length direction of the second single-crystalline semiconductor layer.

A semiconductor device comprising:

• a first insulating layer over a substrate;
• a first single-crystalline semiconductor layer over the first insulating layer;
• a second insulating layer formed over the first insulating layer;
• and
• a second single-crystalline semiconductor layer which is formed over the second insulating layer;
• and
• a third insulating layer formed over the first single-crystalline semiconductor layer, the second insulating layer and the second single-crystalline semiconductor layer,
• wherein one of the first single-crystalline semiconductor layer and the second single-crystalline semiconductor layer has a crystal plane orientation {100} and n-type conductivity,
• wherein the other of the first single-crystalline semiconductor layer and the second single-crystalline semiconductor layer has a crystal plane orientation {110} and p-type conductivity,
• wherein the third insulating layer is in contact with the first single-crystalline semiconductor layer and the second single-crystalline semiconductor layer.