US 7,923,780 B2 · Thin film transistor and manufacturing method thereof

Abstract

The present invention provides a step in which a channel-length of a TFT can be controlled with higher reproducibility. In addition, the present invention provides a step in which a short channel-length of the TFT can be manufactured. Further, the present invention provides a structure of the TFT in which a current-voltage characteristic can be improved. The present invention refers to a thin film transistor comprising a lamination layer wherein a first conductive film, a first insulating film and a second conductive film are sequentially laminated, a semiconductor film formed so as to be in contact with the side surface of the lamination layer, and a third conductive film covering the semiconductor film through a second insulating film. The first conductive film and the second conductive film are a source electrode and a drain electrode, and a region which is in contact with the first insulating film and the third conductive film is a channel forming region in semiconductor film, and the third conductive film is a gate electrode.

Claims15

Dependent claims

A thin film transistor comprising:

a lamination layer comprising a first conductive film, a first insulating film, and a second conductive film, which is sequentially laminated over an insulating surface;
a semiconductor film formed in contact with a side surface of the lamination layer;
and
a third conductive film covering the semiconductor film with a second insulating film interposed therebetween,
wherein a channel forming region is formed in a region of the semiconductor film contacting with the first insulating film,
wherein the semiconductor film has a shape of a band extending around an edge of the second conductive film, and has an opening,
wherein the third conductive film is a gate electrode, and
wherein the side surface of the lamination layer is slanted to the insulating surface.

5 more elements

A thin film transistor comprising:

a lamination layer comprising n conductive films and (n−1) insulating films, which are alternately laminated over an insulating surface;
a semiconductor film formed in contact with a side surface of the lamination layer;
and
a second conductive film covering the semiconductor film with a second insulating film interposed therebetween,
wherein n is an integer of 2 or more,
wherein, among the n conductive films, a conductive film contacting with the insulating surface and a conductive film which is farthest from the conductive film contacting with the insulating surface are a source electrode and a drain electrode, respectively,
wherein a channel forming region is formed in a region of the semiconductor film contacting with the (n−1) insulating films,
wherein the semiconductor film has a shape of a band extending around an edge of the drain electrode, and has an opening,
wherein the second conductive film is a gate electrode, and
wherein the side surface of the lamination layer is slanted to the insulating surface.

7 more elements

Dependencies are inferred from the claim text.

Thin film transistor and manufacturing method thereof

Life of this patent

Thin film transistor and manufacturing method thereof

Life of this patent

Abstract

Claims15