Power semiconductor device and method for manufacturing the same
AssigneeDongbu Electronics Co., Ltd.
InventorsChoul Joo Ko, Nam Joo Kim
Life of this patent
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Abstract
Disclosed are a power semiconductor device and a method for manufacturing the same. The power semiconductor device has a PIP capacitor and an LDMOS transistor, the LDMOS transistor having second and third gate electrodes separate from a first gate electrode, which may be formed in the process of forming the upper electrode of the PIP capacitor, so it is possible to realize an LDMOS having a higher breakdown voltage and lower Ron and Rsp without additional processing. A drain voltage, which may be different from a voltage applied to the first gate electrode, may be applied to the third gate electrode, so it is possible to realize an LDMOS having a high breakdown voltage and low Ron and Rsp.
Claims10
A power semiconductor device comprising:
- an LDMOS transistor, a first field insulating layer in a first predetermined region of a semiconductor substrate, a source region at a first side of the first field insulating layer, a drain region at a second side of the first field insulating layer, a first gate electrode on the first field insulating layer between the source region and the drain region, a second gate electrode separate from the first gate electrode on the first field insulating layer, and a third gate electrode on an upper part of the second gate electrode and insulated from the second gate electrode by a first dielectric layer;
- and
- a PIP capacitor including a second field insulating layer on a second predetermined region of the semiconductor substrate, a lower electrode on the second field insulating layer, a second dielectric layer on the lower electrode, and an upper electrode on the dielectric layer.
Dependencies are inferred from the claim text.