Power MOS device with conductive contact layer
AssigneeAlpha and Omega Semiconductor Incorporated
InventorsAnup Bhalla, Sik Lui, Tiesheng Li
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a drain, a body disposed over the drain, a source embedded in the body, a gate trench extending through the source and the body into the drain, a gate disposed in the gate trench, a source body contact trench extending through the source into the body, a conductive contact layer disposed along at least a portion of a source body contact trench sidewall and in contact with at least a portion of the source, and a trench filling material disposed in the source body contact trench and overlaying at least a portion of the conductive contact layer.
Claims12
A semiconductor device comprising:
- a drain;
- a body disposed over the drain;
- a source embedded in the body;
- a gate trench extending through the source and the body into the drain;
- a gate disposed in the gate trench;
- a source body contact trench extending through the source into the body;
- a conductive contact layer disposed along at least a portion of a source body contact trench sidewall and in contact with at least a portion of the source;
- and
- a trench filling material disposed in the source body contact trench and overlaying at least a portion of the conductive contact layer;
- and
- an anti-punch through dopant region that is formed in the body, along at least a portion of the source body contact trench, and in contact with the conductive contact layer;
- wherein
- the conductive contact layer and the drain form a Schottky diode.
A semiconductor device comprising:
- a drain;
- a body disposed over the drain;
- a source embedded in the body;
- a gate trench extending through the source and the body into the drain;
- a gate disposed in the gate trench;
- a source body contact trench extending through the source into the body;
- a conductive contact layer disposed along at least a portion of a source body contact trench sidewall and in contact with at least a portion of the source;
- and
- a trench filling material disposed in the source body contact trench and overlaying at least a portion of the conductive contact layer;
- an anti-punch through dopant region that is formed in the body and along a portion of the source body contact trench in contact with the conductive contact layer;
- and
- a plug formed in a space in a bottom region of the source body contact trench;
- wherein the anti-punch through dopant region does not extend substantially below top surface of the plug.
A semiconductor device comprising:
- a drain;
- a body disposed over the drain;
- a source embedded in the body;
- a gate trench extending through the source and the body into the drain;
- a gate disposed in the gate trench;
- a source body contact trench extending through the source into the body;
- a conductive contact layer disposed along at least a portion of a source body contact trench sidewall and in contact with at least a portion of the source;
- and
- a trench filling material disposed in the source body contact trench and overlaying at least a portion of the conductive contact layer;
- and
- a plug formed in a space in a bottom region of the source body contact trench;
- wherein the plug comprises a dielectric material overlaying a portion of the conductive contact layer.
Dependencies are inferred from the claim text.