Semiconductor device with a semiconductor body and method for producing it

A semiconductor device with a semiconductor body, comprising:

• first electrodes which contact first highly doped semiconductor zones and complementary-conduction body zones surrounding the first semiconductor zones;
• a second electrode which contacts a second highly doped semiconductor zone;
• a drift zone which is arranged between the body zones and the second semiconductor zone in the semiconductor body;
• control electrodes which are insulated from the semiconductor body by a gate oxide and act on the body zones for controlling the semiconductor device;
• minority charge carrier injector zones situated within the body zones with complementary conduction to the body zones, arranged between the first semiconductor zones and the drift zone;
• and
• wherein a pedestal area doped more weakly than the drift zone, of the same conduction type as the drift zone, which has minority charge carrier injector zones of complementary conduction, is arranged between the drift zone and the second semiconductor zone.

A semiconductor device with a semiconductor body, comprising:

• first electrodes which contact first highly doped semiconductor zones and complementary-conduction body zones surrounding the first semiconductor zones;
• a second electrode which contacts a second highly doped semiconductor zone;
• a drift zone which is arranged between the body zones and the second semiconductor zone in the semiconductor body;
• control electrodes which are insulated from the semiconductor body by a gate oxide and act on the body zones for controlling the semiconductor device;
• wherein the body zones comprise minority charge carrier injector zones with complementary conduction to the body zones, arranged between the first semiconductor zones and the drift zone;
• and
• wherein the injector zones are oriented in such a manner that they have within the drift zone material planar first pn junctions on their top sides in the direction of the trench structures and planar second pn junctions on their undersides in the direction of the second electrode, and wherein the injector zones are surrounded by the drift zone material of the drift zone or are arranged below the trench structures or are arranged below and offset to the trench structures.