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US 7,923,765 B2Granted
Non-volatile memory device
AssigneeOki Semiconductor Co., Ltd.
InventorToru Mori
Life of this patent
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Abstract
A non-volatile memory device includes a memory cell region which is formed on a semiconductor substrate to store predetermined information, and a peripheral circuit region which is formed on the semiconductor substrate. The memory cell region includes a gate electrode; and a charge storage layer, the charge storage layer being formed to be a notch or wedge shape having an edge extending into both sides of a bottom end of the gate electrode. The peripheral circuit region includes no charge storage layer therein.
Claims7
A non-volatile memory device, comprising:
- a memory cell region which is formed on a semiconductor substrate to store predetermined information, and
- a peripheral circuit region which is formed on said semiconductor substrate, wherein
- said memory cell region comprises a gate electrode;
- and a charge storage layer, the charge storage layer being formed to be a notch or wedge shape having an edge extending into both sides of a bottom end of said gate electrode,
- said peripheral circuit region comprises no charge storage layer therein.
2 more elements
Dependencies are inferred from the claim text.