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US 7,923,762 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeSony Corporation
InventorKojiro Nagaoka
Life of this patent
Estimating the term…
Abstract
Disclosed herein is a semiconductor device, including: an insulating film provided on a semiconductor substrate so as to have a trench pattern; a gate insulating film provided so as to cover an inner wall of the trench pattern; and a gate electrode formed so as to be filled in the trench pattern through the gate insulating film and so as to protrude more widely than the trench pattern on both sides of the trench pattern on the insulating film.
Claims8
A semiconductor device, comprising:
- a tri-layered insulating film provided for a trench pattern;
- a gate insulating film provided so as to cover a bottom and inner walls of said trench pattern;
- and
- a tri-layered gate electrode formed so as to be filled in said trench pattern through said gate insulating film and so as to protrude more widely than said trench pattern on both sides of said trench pattern on said insulating film;
- wherein said gate electrode is formed as to protrude more widely on both sides of the trench pattern and an opening width of a connection hole where a contact plug is formed is wider than the width of said trench pattern but smaller than the width of said gate electrode.
2 more elements
Dependencies are inferred from the claim text.