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US 7,923,761 B2Granted
Semiconductor device including gate insulation film that is formed of pyroceramics, and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorZhengwu Jin
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Abstract
A semiconductor device includes a gate insulation film that is formed of pyroceramics including an amorphous matrix layer, which is provided on a major surface of a silicon substrate, and crystalline phases lines with a high dielectric constant, which are dispersed in the amorphous matrix layer. The semiconductor device further includes a gate electrode that is provided on the gate insulation film.
Claims15
A semiconductor device, comprising:
- a gate insulation film that is formed of pyroceramics excluding pure ceramics, the pyroceramics including an amorphous matrix layer, which is provided on a major surface of a silicon substrate, and crystalline phases with a high dielectric constant, which are dispersed in the amorphous matrix layer, the pyroceramics including a first temperature region for forming crystal nuclei in the amorphous matrix layer, and a second temperature region for growing the crystalline phases in the amorphous matrix layer;
- and
- a gate electrode that is provided on the gate insulation film.
A method of manufacturing a semiconductor device, comprising:
- forming a silicon oxide film on a surface of a silicon substrate;
- implanting ion species, which form high-dielectric-constant crystalline phases through chemical reactions by a heat treatment of an amorphous layer, into the silicon oxide film;
- performing a first heat treatment step to form a first amorphous layer;
- subjecting the first amorphous layer to a second heat treatment for precipitating the crystal nuclei with a high dielectric constant;
- and
- subjecting the first amorphous layer, which includes the crystal nuclei, to a third heat treatment for growing the crystal nuclei into crystalline phases with a high dielectric constant and making the amorphous layer which includes the crystal nuclei into an amorphous matrix layer including dispersed crystalline phases, thus forming a pyroceramics excluding pure ceramics layer.
3 more elements
A method of manufacturing a semiconductor device, comprising:
- implanting ion species into a surface of a silicon substrate;
- growing a silicon oxide film including the ion species on the surface of the silicon substrate;
- performing a first heat treatment step to form a first amorphous layer;
- subjecting the first amorphous layer to a second heat treatment for precipitating the crystal nuclei with a high dielectric constant;
- and
- subjecting the first amorphous layer, which includes the crystal nuclei, to a third heat treatment for growing the crystal nuclei into crystalline phases with a high dielectric constant and making the amorphous layer which includes the crystal nuclei into an amorphous matrix layer including dispersed crystalline phases, thus forming a pyroceramics excluding pure ceramics layer.
3 more elements
Dependencies are inferred from the claim text.