Metal gate semiconductor device and manufacturing method
AssigneeTaiwan Semiconductor Manufacuturing Company, Ltd.
InventorsChien-Chao Huang, Kuang-Hsin Chen, Fu-Liang Yang
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a metal gate includes providing a substrate including a gate electrode located on the substrate. A plurality of layers is formed, including a first layer located on the substrate and the gate electrode and a second layer adjacent the first layer. The layers are etched to form a plurality of adjacent spacers, including a first spacer located on the substrate and adjacent the gate electrode and a second spacer adjacent the first spacer. The first spacer is then etched and a metal layer is formed on the device immediately adjacent to the gate electrode. The metal layer is then reacted with the gate electrode to form a metal gate.
Claims20
A semiconductor device comprising:
- a substrate;
- a plurality of first gate electrodes located on the substrate;
- a first gate dielectric located between each first gate electrode and the substrate, the first gate dielectrics being substantially the same thickness;
- at least one of the first gate electrodes made of a first material;
- at least one of the first gate electrodes made of a second material which is different from the first material;
- at least one second gate electrode located on the substrate, the at least one second gate electrode being made of either the first material or the second material;
- and
- a second gate dielectric located between each at least one second gate electrode and the substrate, the second gate dielectrics having a thickness different from that of the first gate dielectrics.
A semiconductor device comprising:
- a substrate;
- a metal gate electrode located on the substrate and having a top surface portion and a side surface portion;
- and
- a plurality of spacers, the plurality of spacers including a first spacer adjacent to the metal gate electrode and engaging the top surface portion and the side surface portion of the metal gate electrode, and including a second spacer adjacent to the first spacer;
- wherein the metal gate electrode is a metal silicide.
A semiconductor device comprising:
- a substrate;
- a gate electrode located on the substrate;
- a first spacer surrounding the gate electrode and spaced apart from the gate electrode to form a first region therebetween;
- and
- a second spacer located both inside and outside of the first region.
A semiconductor device comprising:
- a substrate;
- a gate electrode located on the substrate;
- a first spacer located on the substrate and adjacent to the gate electrode;
- a second spacer located adjacent the first spacer, which surrounds the gate electrode and is spaced apart from the gate electrode to form a first region therebetween;
- and
- a third spacer located both inside and outside of the first region.
Dependencies are inferred from the claim text.