Back to results
US 7,923,758 B1Granted
Method and apparatus for producing gallium arsenide and silicon composites and devices incorporating same
AssigneeBowling Green State University
InventorsBruno Ullrich, Artur Erlacher
Life of this patent
Estimating the term…
Abstract
The present invention includes methods for producing GaAs/Si composites, GaAs/Si composites, apparatus for preparing GaAs/Si composites, and a variety of electronic and photoelectric circuits and devices incorporating GaAs/Si composites of the present invention.
Claims8
A tunable photodiode comprising:
- (a) a diode structure comprising:
- (i) A first layer comprising silicon;
- and
- (ii) a second layer comprising gallium arsenide;
- said diode structure having an input and an output in contact therewith;
- said gallium arsenide of said second layer being layered onto said silicon of said first layer in a substantially stoichiometric ratio, and whereby said layer of gallium arsenide deposited upon said layer of silicon has a smoothness variation less than 100 nanometers;
- and
- (b) an adjustable source of electrical potential connected to said input and output contacts, whereby the peak wavelength sensitivity of said diode structure to incident light thereupon being tuned through application of said electrical potential.
5 more elements
Dependencies are inferred from the claim text.