III-nitride compound semiconductor light emitting device
AssigneeEipValley Co., Ltd.
InventorsTae Kyung Yoo, Eun Hyun Park
Life of this patent
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Abstract
The present invention relates a III-nitride compound semiconductor light emitting device in which a first layer composed of a carbon-containing compound layer, such as an n-type or p-type silicon carbide (SiC), silicon carbon nitride (SiCN) or carbon nitride layer (CN) layer, is formed on the p-type III-nitride semiconductor layer of the existing III-nitride semiconductor light emitting device, and a second layer composed of a III-nitride semiconductor layer with a given thickness is formed on the first layer.
Claims19
A III-nitride compound semiconductor light emitting device including an n-type III-nitride semiconductor layer, an active layer made of III-nitride semiconductor and deposited over the n-type III-nitride semiconductor layer, a p-type III-nitride semiconductor layer deposited over the active layer made of III-nitride semiconductor, and a p-side electrode deposited over the p-type III-nitride semiconductor layer, the light emitting device comprising:
- a first layer composed of a carbon-containing compound layer, the first layer interposed between the p-type III-nitride semiconductor layer and the p-side electrode, and the first layer being grown on the p-type III-nitride semiconductor layer;
- a second layer composed of a III-nitride semiconductor layer, the second layer including a plurality of island-like protrusions, each of the protrusions being formed on a top surface of the first layer;
- and
- the p-side electrode being formed on said second layer.
A III-nitride compound semiconductor light emitting device comprising:
- a substrate;
- a buffer layer deposited on the substrate;
- an n-type Al(x)Ga(y)In(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) layer deposited on the buffer layer;
- an Al(x)Ga(y)In(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) active layer deposited on the n-type Al(x)Ga(y)In(1x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) layer;
- an p-type Al(x)Ga(y)In(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) layer deposited on the Al(x)Ga(y)In(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) active layer;
- a first layer made of one selected from the group consisting of silicon carbide (SiaCb;
- a,b≠0), silicon carbon nitride (SicCdNe;
- c,d,e≠0) and carbon nitride (CfNg;
- f,g≠0), and grown on the p-type Al(x)Ga(y)In(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) layer;
- a second layer made of p-type Al(x)Ga(y)In(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1), composed of a plurality of islands for increasing external quantum efficiency, and formed on the first layer;
- a p-side electrode deposited on the second layer;
- and,
- an n-side electrode deposited on the n-type Al(x)Ga(y)In(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1) layer.
Dependencies are inferred from the claim text.