Semiconductor light-emitting device

#1. Field of the Invention

#This invention relates to a semiconductor light-emitting device and, more particularly, to a semiconductor light-emitting device which has high light-extraction efficiency.

#2. Description of the Prior Art

#FIG. 1 is a schematic diagram illustrating a light-emitting diode of prior arts.

#FIG. 2A is a cross-sectional view illustrating a semiconductor light-emitting device according to an embodiment of the invention.

#FIG. 2B is a cross-sectional view illustrating another semiconductor light-emitting device according to an embodiment of the invention.

#Please refer to FIG. 2A. FIG. 2A is a cross-sectional view illustrating a semiconductor light-emitting device 2 according to an embodiment of the invention.

#As shown in FIG. 2A, the semiconductor light-emitting device 2 includes a substrate 20, a first conductive type semiconductor material layer 22, a light-emitting layer 24, a second conductive type semiconductor material layer 26, a first electrode 30, a second electrode 32, and a plurality of bump structures 28.

#In a practical application, the substrate 20 can be, but not limited to, glass, silicon, Ge, GaN, GaAs, GaP, AlN, sapphire, spinnel, Al2O3, SiC, ZnO, MgO, LiAlO2, LiGaO2 and MgAlO4.