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US 7,923,743 B2Granted
Semiconductor structure including mixed rare earth oxide formed on silicon
AssigneeInternational Business Machines Corporation
InventorsNestor Alexander Bojarczuk, Jr., Douglas Andrew Buchanan, Supratik Guha, Vijay Narayanan, Lars-Ake Ragnarsson
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Abstract
A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
Claims7
An optical device, comprising:
- a first layer of mixed rare earth oxide on a silicon substrate, said mixed rare earth oxide being single crystal and lattice matched to said silicon substrate;
- a first silicon layer formed on said layer of mixed rare earth oxide;
- a second layer of mixed rare earth oxide formed on the first silicon layer;
- and
- a second silicon layer formed on said second layer of mixed rare earth oxide.
2 more elements
A light-emitting device, comprising:
- a first layer of mixed rare earth oxide on a silicon substrate, said mixed rare earth oxide being single crystal and lattice matched to said silicon substrate;
- a quantum well comprising a first silicon layer formed on said layer of mixed rare earth oxide;
- a second layer of mixed rare earth oxide formed on the first silicon layer;
- and
- a second silicon layer formed on said second layer of mixed rare earth oxide.
2 more elements
Dependencies are inferred from the claim text.