Thin film transistor
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsKai-Li Jiang, Qun-Qing Li, Shou-Shan Fan
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Abstract
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer is connected to the source electrode and the drain electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The semiconducting layer includes a carbon nanotube layer, and the carbon nanotube layer comprises a plurality of semiconducting carbon nanotubes.
Claims20
A thin film transistor comprising:
- a source electrode;
- a drain electrode spaced from the source electrode;
- a semiconducting layer connected to the source electrode and the drain electrode, the semiconducting layer comprising a carbon nanotube layer, and the carbon nanotube layer comprising a plurality of semiconducting carbon nanotubes;
- an insulating layer;
- and
- a gate electrode insulated from the source electrode, the drain electrode, and the semiconducting layer by the insulating layer, wherein the carbon nanotubes in the carbon nanotube layer are disordered, and entangled with each other.
A thin film transistor comprising:
- a source electrode;
- a drain electrode spaced from the source electrode;
- a semiconducting layer connected to the source electrode and the drain electrode, the semiconducting layer comprising a carbon nanotube layer, and the carbon nanotube layer comprising a plurality of semiconducting carbon nanotubes;
- an insulating layer;
- and
- a gate electrode insulated from the source electrode, the drain electrode, and the semiconducting layer by the insulating layer, wherein the gate electrode is located on an insulating substrate, the insulating layer is located on the gate electrode, the semiconducting layer is located on the insulating layer, and the source electrode and the drain electrode are located on a surface of the semiconducting layer.
A thin film transistor comprising:
- a source electrode;
- a drain electrode spaced from the source electrode;
- a semiconducting layer connected to the source electrode and the drain electrode, the semiconducting layer being consisted of a carbon nanotube array, and the carbon nanotube array comprising a plurality of semiconducting carbon nanotubes, the plurality of semiconducting carbon nanotubes having a diameter in a range from about 1 nanometer to about 2 nanometers;
- an insulating layer;
- and
- a gate electrode insulated from the source electrode, the drain electrode, and the semiconducting layer by the insulating layer, wherein the gate electrode is located on an insulating substrate, the insulating layer is located on the gate electrode, the semiconducting layer is located on the insulating layer, and the source electrode and the drain electrode are located on a surface of the semiconducting layer.
Dependencies are inferred from the claim text.