Active matrix substrate and its manufacturing method

A method of manufacturing an active matrix substrate, comprising the steps of:

• (a) forming gate lines and auxiliary capacitive electrodes on a substrate;
• (b) forming a first inlayer insulating film to cover said gate lines and said auxiliary capacitive electrodes;
• (c) forming semiconductor layers constituting switching elements;
• (d) forming source lines on said first interlayer insulating film to intersect with said gate lines;
• (e) forming a drain electrodes so that at least parts of said drain electrodes are opposed to said auxiliary capacitive electrodes with said first interlayer insulating film sandwiched in between;
• (f) forming a second interlayer insulting film to cover said semiconductor layers;
• and source lines, and said drained electrodes;
• (g) forming contact holes in a said second interlayer insulating film to reach said drain electrodes in areas surrounded by areas where said auxiliary capacitive electrodes are formed, but not in the areas where said auxiliary capacitive electrodes are formed;
• and
• (h) forming pixel electrodes on said second interlayer insulating film to include reflecting pixel electrodes and transparent pixel electrodes directly connected to each other, and to be connected to said drain electrodes through said contact holes,
• wherein the areas surround by areas where said auxiliary capacitive electrodes are formed being in a state where the whole or part of the contact portions of said contact holes with said drain electrodes is surrounded from two or three directions by the areas where the auxiliary capacitive electrodes are formed.