Thin-film transistor and display device using oxide semiconductor
AssigneeCanon Kabushiki Kaisha
InventorsRyo Hayashi, Katsumi Abe, Masafumi Sano
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Abstract
The thin-film transistor of the present invention has at least a semiconductor layer including: on a substrate, a source electrode, a drain electrode, and a channel region; a gate insulating film; and a gate electrode, wherein the semiconductor layer is an oxide semiconductor layer, and wherein the gate insulating film is amorphous silicon including at least O and N, and the gate insulating film has a distribution of an oxygen concentration in a thickness direction so that the oxygen concentration is high in the side of an interface with an oxide semiconductor layer and the oxygen concentration decreases toward the side of the gate electrode.
Claims21
A thin-film transistor comprising, on a substrate:
- a semiconductor layer including a channel region and being electrically connected to a source electrode and a drain electrode;
- a gate insulating film;
- and
- a gate electrode,
- wherein the semiconductor layer is an amorphous oxide semiconductor layer,
- wherein the gate insulating film is a single layer of amorphous silicon oxynitride, and
- wherein the gate insulating film has an oxygen concentration that varies in a thickness direction, so that the oxygen concentration is relatively high at a side of an interface with the amorphous oxide semiconductor layer, continuously decreases in the thickness direction, and is relatively low at a side of an interface with the gate electrode.
A thin-film transistor comprising, on a substrate:
- a semiconductor layer including a channel region and being electrically connected to a source electrode and a drain electrode;
- a gate insulating film;
- and
- a gate electrode,
- wherein the semiconductor layer is an amorphous oxide semiconductor layer,
- wherein the gate insulating film is a single layer of amorphous silicon oxynitride,
- wherein the gate insulating film has an oxygen concentration that varies in a thickness direction, so that the oxygen concentration is relatively high at a side of an interface with the amorphous oxide semiconductor layer, decreases gradually in the thickness direction, and is relatively low at a side of an interface with the gate electrode, and
- wherein the relatively high oxygen concentration of the gate insulating film at the side of the interface with the amorphous oxide semiconductor layer minimizes movement of oxygen through the interface between the gate insulating film and the amorphous oxide semiconductor layer.
A thin-film transistor comprising, on a substrate:
- a semiconductor layer including a channel region and being electrically connected to a source electrode and a drain electrode;
- a gate insulating film;
- and
- a gate electrode,
- wherein the semiconductor layer is an amorphous oxide semiconductor layer,
- wherein the gate insulating film is a single layer of amorphous silicon oxynitride, and
- wherein the gate insulating film has a gradient distribution of an oxygen concentration in a thickness direction, so that the oxygen concentration is relatively high at a side of an interface with the amorphous oxide semiconductor layer, and so that the oxygen concentration continuously decreases toward a side of an interface with the gate electrode.
Dependencies are inferred from the claim text.