Electromagnetically protected organic thin film transistor

An organic thin film transistor comprising:

• a substrate;
• a gate electrode placed on the substrate;
• a gate insulating film placed on the gate electrode and the substrate;
• a source electrode and a drain electrode which are placed on the gate insulating film and the substrate;
• a first organic semiconductor layer of a first conductivity type placed on the gate insulating film between and directly on the source electrode and the drain electrode;
• a second organic semiconductor layer of a first conductivity type placed on the first organic semiconductor layer;
• a third organic semiconductor layer of a second conductivity type placed on the second organic semiconductor layer;
• and
• an electrically floating conductor layer placed directly on the third organic semiconductor layer,
• wherein the third organic semiconductor layer and the second organic semiconductor layer define a p-n diode sandwiched by the first organic semiconductor layer and the conductor layer, and
• the p-n diode being configured to prevent a short circuit through the conductor layer between the source electrode and the drain electrode.