Organic luminescence transistor device and manufacturing method thereof

A manufacturing method of an organic luminescence transistor device, the manufacturing method being for manufacturing an organic luminescence transistor device, the manufacturing method comprising the steps of:

• preparing a substrate on which a first electrode layer has been formed in a predetermined pattern,
• providing a layered structure on a side of an upper surface of the substrate at an area not provided with the first electrode layer such that the layered structure sandwiches the first electrode layer in a plan view, the layered structure including an insulation layer, an assistance electrode layer and an electric-charge-injection inhibiting layer in this order,
• providing an organic EL layer on a side of an upper surface of the first electrode layer, and
• providing a second electrode layer on a side of an upper surface of the organic EL layer,
• wherein
• a thickness of the first electrode layer and a thickness of the insulation layer are adjusted in such a manner that the first electrode layer is not in contact with the assistance electrode layer, and
• the assistance electrode layer is in direct contact with the organic EL layer.

An organic transistor device comprising

• a substrate,
• a first electrode layer provided in a predetermined pattern on a side of an upper surface of the substrate,
• a layered structure provided on the side of the upper surface of the substrate at an area not provided with the first electrode layer, the layered structure sandwiching the first electrode layer in a plan view, the layered structure including an insulation layer, an assistance electrode layer and an electric-charge-injection inhibiting layer in this order,
• an organic semiconductor layer provided at least on a side of an upper surface of the first electrode layer, and
• a second electrode layer provided on a side of an upper surface of the organic semiconductor layer,
• wherein
• a thickness of the first electrode layer and a thickness of the insulation layer are adjusted in such a manner that the first electrode layer is not in contact with the assistance electrodes layer, and
• the assistance electrode layer is in direct contact with the organic semiconductor layer.