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US 7,923,718 B2Granted
Organic thin film transistor with dual layer electrodes
AssigneeXerox Corporation
InventorsYiliang Wu, Beng S. Ong
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Abstract
A thin-film transistor (TFT) with dual-layer source and drain electrodes is provided. Each source and drain electrode comprises a first layer and a second layer. The first layer has a work function which differs from the energy level of the semiconductor by at least 0.5 eV and the second layer has a work function matching the energy level of the semiconductor. The semiconductor has a short channel length.
Claims16
A thin-film transistor, comprising:
- a source electrode;
- a drain electrode;
- a gate dielectric layer;
- and
- a polythiophene semiconductor layer;
- wherein the source electrode and drain electrode each comprise a first layer and a second layer, the first layer directly contacting the dielectric layer and separating the second layer from the dielectric layer, the second layer directly contacting the semiconductor layer;
- wherein the source electrode first layer has a work function differing from the energy level of the semiconductor layer by at least 1.0 eV;
- wherein the source electrode second layer has a work function differing from the energy level of the semiconductor layer by at most 0.2 eV;
- wherein the semiconductor layer has a channel length of from about 1 to about 5 micrometers;
- and
- wherein the transistor has a mobility of at least 0.39 cm2/v·sec and a current on/off ratio of at least about 107.
8 more elements
An organic thin-film transistor, comprising:
- a source electrode;
- a drain electrode;
- a gate dielectric layer;
- and
- organic polythiophene semiconductor layer;
- wherein the source electrode and drain electrode each comprise a first layer and a second layer, the first layer directly contacting the dielectric layer and separating the second layer from the dielectric layer;
- wherein each first layer has a work function differing from the energy level of the semiconductor layer by at least 0.5 eV;
- wherein each second layer has a work function differing from the energy level of the semiconductor layer by at most 0.2 eV;
- and
- wherein the semiconductor layer has a channel length of from about 5 to about 10 micrometers;
- and
- wherein the transistor has a mobility of at least 0.39 cm2/V·sec and a current on/off ratio of at least about 107.
9 more elements
A bottom-gate bottom-contact organic thin-film transistor, comprising:
- a dielectric layer;
- a source electrode;
- a drain electrode;
- and
- a polythiophene semiconductor layer;
- wherein the source electrode and drain electrode each comprise a first layer of titanium and a second layer of gold, the first layer directly contacting the dielectric layer and separating the second layer from the dielectric layer, the second layer directly contacting the semiconductor layer;
- and
- wherein the semiconductor layer has a channel length of at most about 10 micrometers;
- wherein the transistor has a mobility of at least 0.39 cm2/V·sec and a current on/off ratio of at least about 107.
6 more elements
Dependencies are inferred from the claim text.