Phase change memory cell structures and methods for manufacturing the same
AssigneeIndustrial Technology Research Institute
InventorHong-Hui Hsu
Life of this patent
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Abstract
Phase change memory cell structures and methods for fabricating the same are provided. An exemplary embodiment of a phase change memory cell structure includes a first electrode formed over a first dielectric layer. A second dielectric layer is formed over the first electrode. A conductive member is formed through the second dielectric layer and electrically contacting the first electrode, wherein the conductive member comprises a lower element and an upper element sequentially stacking over the first electrode, and the lower and upper elements comprises different materials. A phase change material layer is formed over the second dielectric layer, electrically contacting the conductive member. A second electrode is formed over the phase change material layer.
Claims9
A phase change memory cell structure, comprising:
- a first electrode formed over a first dielectric layer;
- a second dielectric layer formed over the first electrode;
- a conductive member formed through the second dielectric layer and electrically contacting the first electrode, wherein the conductive member comprises a lower element and an upper element sequentially stacking over the first electrode, and the lower and upper elements comprises different materials, wherein the lower element comprises CoWP or CoWB;
- a phase change material layer formed over the second dielectric layer, electrically contacting the conductive member;
- and
- a second electrode formed over the phase change material layer.
Dependencies are inferred from the claim text.