Oligothiophene-arylene derivatives and organic thin film transistors using the same

An organic thin film transistor comprising a substrate, a gate electrode, a gate insulating film, an organic active layer and source-drain electrodes wherein the organic active layer is made of the oligothiophene-arylene derivative according to an oligothiophene-arylene derivative of Formula 1:

• wherein
• Ar is a C2-30 heteroarylene interrupted by at least one nitrogen atom which may be substituted with hydrogen, hydroxyl, amino, a C1-20 linear, branched or cyclic alkyl, C1-20 alkoxyalkyl, alkylamino, ester or amido, or C1-16 linear, branched or cyclic alkoxy, alkylamino, ester or amido;
• Ar1 is a C2-30 aryl group which may be interrupted by at least one heteroatom and may be substituted with C1-20 linear, branched or cyclic alkyl,
• Ar2 is a C5-30 aryl group which may be interrupted by at least one heteroatom and may be substituted with hydrogen, hydroxyl, amino, C1-20 linear, branched or cyclic alkyl, C1-20 alkoxyalkyl, alkylamino, ester or amido, or C1-16 linear, branched or cyclic alkoxy, alkylamino, ester or amido;
• the substituents R1 are each independently hydrogen, hydroxyl, amino, C1-20 linear, branched or cyclic alkyl, C1-20 alkoxyalkyl, alkylamino, ester, amido, or a C1-16 linear, branched or cyclic alkoxy, alkylamino, ester or amido;
• n1 is 1;
• n2 is an integer between 2 and 8;
• and
• n3 is an integer between 0 and 6.