Method to improve the step coverage and pattern loading for dielectric films
AssigneeApplied Materials, Inc.
InventorsMihaela Balseanu, Mei-yee Shek, Li-Qun Xia, Hichem M'Saad
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Abstract
A method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided. The method includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained. The plasma may be generated from an oxygen-containing gas.
Claims15
A method of forming a dielectric layer on a patterned substrate in a chamber, comprising:
- exposing the patterned substrate to a silicon-containing precursor in the presence of a plasma to deposit a carbon doped silicon oxide layer on the patterned substrate;
- purging the silicon-containing precursor from the chamber;
- treating the carbon doped silicon oxide layer with a plasma from an oxygen-containing gas;
- and
- repeating the exposing the patterned substrate to the silicon-containing precursor in the presence of the plasma to deposit the carbon doped silicon oxide layer, the purging the silicon-containing precursor from the chamber, and the treating the carbon doped silicon oxide layer until a desired thickness of the dielectric layer is obtained, wherein the silicon-containing precursor comprises one or more alkyl groups bonded to silicon.
A method of forming a dielectric layer on a patterned substrate in a chamber, comprising:
- exposing the patterned substrate to a nitrogen-containing and silicon-containing precursor in the presence of a plasma to deposit a silicon nitride layer on the patterned substrate;
- purging the nitrogen-containing and silicon-containing precursor from the chamber;
- treating the silicon nitride layer with a plasma from oxygen gas;
- and
- repeating the exposing the patterned substrate to a nitrogen-containing and silicon-containing precursor in the presence of the plasma to deposit the silicon nitride layer, the purging the nitrogen-containing and silicon-containing precursor from the chamber, and the treating the silicon nitride layer until a desired thickness of the dielectric layer is obtained, wherein the nitrogen-containing and silicon-containing precursor is selected from the group consisting of bis(tertiary-butylamino)silane, tridimethylaminosilane, trisdimethylaminosilane, and combinations thereof.
A method of forming a dielectric layer on a patterned substrate in a chamber, comprising:
- exposing the patterned substrate to a silicon-containing precursor in the presence of a plasma to deposit a silicon-containing layer on the patterned substrate;
- purging the silicon-containing precursor from the chamber;
- treating the silicon-containing layer with a plasma from a nitrogen-containing gas;
- and
- repeating the exposing the patterned substrate to the silicon-containing precursor in the presence of the plasma to deposit the silicon-containing layer, the purging the silicon-containing precursor from the chamber, and the treating the silicon-containing layer until a desired thickness of the dielectric layer is obtained, wherein the silicon-containing precursor comprises a Si—N backbone and one or more alkyl groups bonded to silicon and the silicon-containing precursor is selected from the group consisting of bis(tertiary-butylamino)silane, tridimethylaminosilane, trisdimethylaminosilane, and combinations thereof.
Dependencies are inferred from the claim text.