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US 7,923,383 B2Granted
Method and apparatus for treating a semi-conductor substrate
AssigneeTokyo Electron Limited
InventorsKnut Beekmann, Guy Patrick Tucker
Life of this patent
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Abstract
This invention relates to a method of treating a semiconductor wafer and in particular, but not exclusively, to planarisation. The method consists of depositing a liquid short-chain polymer formed from a silicon containing bas or vapour. Subsequently water and OH are removed and the layer is stabilised.
Claims18
A method of treating a semi-conductor substrate comprising the steps of:
- (a) positioning the substrate in a deposition chamber;
- (b1) introducing into the deposition chamber in the gaseous or vapour state a silicon-containing compound and a further compound containing peroxide bonding, and reacting the silicon-containing compound with the further compound to provide on said substrate a polymer layer;
- and then
- (b2) removing said substrate having the polymer layer from the deposition chamber for a period of days and then positioning the substrate in a heat treatment chamber and as a result exposing the polymer layer to ambient atmosphere;
- and
- (c) in the heat treatment chamber, heating, by radiative means, the substrate in an atmosphere having an oxygen content below 100 parts per million prior to the deposition of any further layer to substantially remove O—H bonds from the polymer and substantially cure the layer.
3 more elements
Dependencies are inferred from the claim text.