Methods of forming electronic devices containing Zr-Sn-Ti-O films
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
A dielectric film containing Zr—Sn—Ti—O and methods of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Films of Zr—Sn—Ti—O may be formed in a self-limiting growth process.
Claims25
A method comprising:
- forming a dielectric layer containing a Zr—Sn—Ti—O film including forming the Zr—Sn—Ti—O film by a self-limiting growth process using metal iodine precursors in the self-limiting growth process, the dielectric layer formed as part of an electronic device.
A method comprising:
- forming a first conductive layer;
- forming a dielectric layer on the first conductive layer, the dielectric layer containing a Zr—Sn—Ti—O film, the Zr—Sn—Ti—O film formed by a self-limiting growth process using metal iodine precursors in the self-limiting growth process;
- and
- forming a second conductive layer on the dielectric layer, wherein the first conductive layer, the second conductive layer, and the dielectric layer form a capacitor.
A method comprising:
- forming a source region and a drain region in a substrate, the source region and the drain region separated by a body region;
- forming a dielectric layer above the body region between the source and drain regions, the dielectric layer containing a Zr—Sn—Ti—O film, the Zr—Sn—Ti—O film formed by a self-limiting growth process using metal iodine precursors in the self-limiting growth process;
- and
- forming a gate coupled to the dielectric layer to form a transistor.
A method comprising:
- forming a dielectric layer in a memory device, the dielectric layer containing a Zr—Sn—Ti—O film, the Zr—Sn—Ti—O film formed by a self-limiting growth process using metal iodine precursors in the self-limiting growth process.
A method comprising:
- providing a processor;
- and
- coupling an integrated circuit to the processor to form an electronic system, wherein the processor and/or the integrated circuit includes a dielectric layer containing a Zr—Sn—Ti—O film, the Zr—Sn—Ti—O film formed by a self-limiting growth process using metal iodine precursors in the self-limiting growth process.
The method claim of 21, wherein the method includes forming the dielectric layer substantially as a solid solution of TiO2—ZrO2—SnO2.
The method claim of 21, wherein forming the Zr—Sn—Ti—O film by the self-limiting growth process includes forming a Ti-rich amorphous Zr—Sn—Ti—O film.
The method claim of 21, wherein the method includes forming the dielectric layer free of chlorine.
The method claim of 21, wherein the method includes forming the electronic system as a wireless system.
Dependencies are inferred from the claim text.