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US 7,923,375 B2Granted
Method for manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorKeisuke Kikutani
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Abstract
A method for manufacturing a semiconductor device includes forming a photo-resist pattern above a first film, implanting a predetermined dopant that increases an etching rate of the first film into the first film using the photo-resist pattern as a mask, thereby forming an implantation layer in the first film, and etching a first portion of the first film, which is at least a part of the implantation layer, using the photo-resist pattern as a mask.
Claims18
A method for manufacturing a semiconductor device, the method comprising:
- forming a photo-resist pattern above a first film;
- implanting a predetermined dopant that increases an etching rate of the first film into the first film using the photo-resist pattern as a mask, thereby forming an implantation layer in the first film;
- and
- etching a first portion of the first film, which is at least a part of the implantation layer, using the photo-resist pattern as a mask,
- wherein wet etching is used for etching the first portion of the first film.
2 more elements
Dependencies are inferred from the claim text.