Method of manufacturing semiconductor device having contact plugs
AssigneeKabushiki Kaisha Toshiba
InventorMasahito Shinohe
Life of this patent
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Abstract
A semiconductor device has a semiconductor substrate in which a plurality of device regions and a plurality of device isolation regions are alternately formed to extend in a first direction; and a plurality of contact plugs formed on the semiconductor substrate, connected to the device regions and arranged on the semiconductor substrate in a zigzag pattern in a second direction perpendicular to the first direction, wherein the contact plugs have a rectangular cross section.
Claims7
A method of manufacturing a semiconductor device having contact plugs in an interlayer insulating film formed over a semiconductor substrate, comprising:
- forming a groove that penetrates through the interlayer insulating film;
- forming conductive films on two opposite side surfaces of the groove;
- depositing a first insulating film on the interlayer insulating film and on upper surfaces of the conductive films, and filling the groove having the conductive films with the first insulating film;
- forming resist patterns on the first insulating film on the conductive films that are to form the contact plugs;
- etching the first insulating film by using the resist patterns as a mask;
- forming gaps by removing the conductive films that are exposed by the etching;
- and
- filling the gaps with a second insulating film.
A method of manufacturing a semiconductor device having a contact plug in an interlayer insulating film formed over a semiconductor substrate, comprising:
- forming a groove that penetrates through the interlayer insulating film;
- forming conductive films on two opposite side surfaces of the groove by depositing a conductive film on top of the interlayer insulating film and in the groove and removing the conductive film on top of the interlayer insulating film and on the bottom of the groove;
- depositing a first insulating film on the interlayer insulating film and filling the groove having the conductive films deposited therein with the first insulating film;
- forming a resist pattern on the first insulating film on the conductive film formed on one side surface of the groove that is to form the contact plug;
- exposing the upper surface of the conductive film formed on the other side surface of the groove by selectively removing the first insulating film by etching using the resist pattern as a mask;
- selectively removing the upper surface of the conductive film that is exposed by the etching;
- and
- filling a gap formed by removal of the conductive film with a second insulating film.
Dependencies are inferred from the claim text.