Through-via and method of forming
AssigneeFreescale Semiconductor, Inc.
InventorBradley P. Smith
Life of this patent
Estimating the term…
Abstract
In one embodiment, a method of forming a via includes forming an first opening in the semiconductor substrate, wherein the first opening has a bottom and sidewalls, forming a sacrificial fill in the first opening, forming a dielectric layer over the sacrificial fill, forming a second opening in the dielectric layer, wherein the second opening is over the sacrificial fill, removing the sacrificial fill from the first opening after forming the second opening, and forming a conductive material in the first opening and second opening.
Claims20
A method of forming a via comprising:
- forming a first opening in the semiconductor substrate, wherein the first opening has a bottom and sidewalls;
- forming a sacrificial fill in the first opening;
- forming a dielectric layer over the sacrificial fill;
- forming a second opening in the dielectric layer, wherein the second opening is over the sacrificial fill;
- removing the sacrificial fill from the first opening after forming the second opening;
- and
- after the removing the sacrificial fill from the first opening, forming a conductive material in the first opening and second opening,
- wherein forming the sacrificial fill in the first opening comprises forming polysilicon in the first opening.
A method of forming a via comprising:
- forming a first opening in the semiconductor substrate, wherein the first opening has a bottom and sidewalls;
- forming a sacrificial fill in the first opening;
- forming a dielectric layer over the sacrificial fill;
- forming a second opening in the dielectric layer, wherein the second opening is over the sacrificial fill;
- removing the sacrificial fill from the first opening after forming the second opening;
- after the removing the sacrificial fill from the first opening, forming a conductive material in the first opening and second opening;
- and
- forming isolation regions in the semiconductor substrate, wherein the sacrificial fill is between the isolation openings.
A method of forming a via, the method comprising:
- providing a semiconductor substrate having a through-via region;
- forming an first opening in the semiconductor substrate in the through-via region;
- thermally oxidizing a portion of a surface of the first opening;
- forming a material comprising silicon in the first opening;
- forming a dielectric layer over the semiconductor substrate;
- forming a second opening in the dielectric layer, wherein the second opening is over the first opening;
- after the forming the second opening in the dielectric layer, removing the material comprising silicon from the first opening;
- and
- after the removing the material comprising silicon from the first opening, forming a conductive material in the first opening and second opening,
- wherein forming the material comprising silicon in the first opening comprises depositing polysilicon in the first opening.
A method of forming a via, the method comprising:
- providing a semiconductor substrate having a through-via region;
- forming an first opening in the semiconductor substrate in the through-via region;
- thermally oxidizing a portion of a surface of the first opening;
- forming a material comprising silicon in the first opening;
- forming a dielectric layer over the semiconductor substrate;
- forming a second opening in the dielectric layer, wherein the second opening is over the first opening;
- after the forming the second opening in the dielectric layer, removing the material comprising silicon from the first opening;
- after the removing the material comprising silicon from the first opening, forming a conductive material in the first opening and second opening;
- forming isolation openings in the through-via region, wherein the first opening is between the isolation openings;
- and
- forming a dielectric material in the isolation openings to form isolation regions.
Dependencies are inferred from the claim text.