Method of forming dielectric films
AssigneesCanon Kabushiki Kaisha, Canon Anelva Corporation
InventorsHideo Kitagawa, Naomu Kitano
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Abstract
A method of forming dielectric films including a metal silicate on a silicon substrate comprises a first step of oxidizing a surface layer portion of the silicon substrate and forming a silicon dioxide film; a second step of irradiating ion on the surface of the silicon dioxide film and making the surface layer portion of the silicon dioxide film into a reaction-accelerating layer with Si—O cohesion cut; a third step of laminating a metal film on the reaction-accelerating layer in a non-oxidizing atmosphere; and a fourth step of oxidizing the metal film and forming a metal silicate film that diffuses a metal from the metal film to the silicon dioxide film.
Claims9
A method of forming a dielectric film including a metal silicate on a silicon substrate, comprising:
- a first step of oxidizing a surface of the silicon substrate for forming a silicon oxide film;
- a second step of irradiating a rare gas ion on the surface of the silicon oxide film for forming the surface of the silicon oxide film which does not contact the silicon substrate into a reaction-accelerating layer with Si—O bonds severed;
- a third step of laminating a metal film on the reaction-accelerating layer in a non-oxidizing atmosphere;
- and
- a fourth step of oxidizing the metal film for forming a metal silicate film that diffuses a metal from the metal film to the silicon oxide film.
A method of forming a dielectric film including a metal silicate on a silicon substrate, comprising:
- a first step of oxidizing a surface of the silicon substrate for forming a silicon oxide film;
- a second step of irradiating an ion selected from the group consisting of a rare gas ion, nitrogen ion, oxygen ion, oxide ion and nitride ion at an incident energy of the ion of 2 eV to 20 eV on the surface of the silicon oxide film for forming the surface of the silicon oxide film which does not contact the silicon substrate into a reaction-accelerating layer with severed Si—O bonds;
- a third step of laminating a metal film on the reaction-accelerating layer in a non-oxidizing atmosphere;
- and
- a fourth step of oxidizing the metal film for forming a metal silicate film that diffuses a metal from the metal film to the silicon oxide film.
Dependencies are inferred from the claim text.