Semiconductor film, semiconductor device and method for manufacturing same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsToru Takayama, Kengo Akimoto
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Abstract
Concerning an art related to a manufacturing method for a semiconductor device having an integrated circuit using thin film transistors on a substrate, a problem is to provide a condition for forming an amorphous silicon film having distortion. In the deposition of an amorphous silicon film using a sputter method, a condition is provided with a frequency of 15 to 25 kHz and a deposition power of 0.5 to 3 kW. This can sufficiently contain Ar at 10×1020/cm3 or more in an amorphous silicon film, thus making possible to form an amorphous silicon film having distortion.
Claims15
A method for manufacturing a semiconductor device comprising:
- forming an amorphous semiconductor film on an insulating surface;
- adding a metal element to the amorphous semiconductor film;
- crystallizing the amorphous semiconductor film to form a crystallized semiconductor film;
- forming a barrier layer on the crystallized semiconductor film by using a solution in which nitric acid is mixed with hydrogen peroxide;
- forming a second semiconductor film comprising an inert gas element on the barrier layer by a sputtering method;
- performing a gettering of the metal element into the second semiconductor film to remove or reduce the metal element in the crystallized semiconductor film;
- and
- removing the second semiconductor film,
- wherein an RF electric power density in the step of forming the second semiconductor film is 0.137 W/cm2 to 6.847 W/cm2.
A method for manufacturing a semiconductor device comprising:
- forming an amorphous semiconductor film over an insulating surface;
- adding a metal element to the amorphous semiconductor film;
- crystallizing the amorphous semiconductor film to form a crystallized semiconductor film;
- forming a barrier layer on the crystallized semiconductor film by using a solution in which nitric acid is mixed with hydrogen peroxide;
- forming a second semiconductor film comprising an inert gas element on the barrier layer by a sputtering method;
- gettering the metal element into the second semiconductor film to remove or reduce the metal element in the crystallized semiconductor film;
- and
- removing the second semiconductor film,
- wherein a concentration of the inert gas element is with a range from 1×1019/cm3 to 1×1022/cm3,
- wherein internal stress in the amorphous semiconductor film is a compression stress, and
- wherein an RF electric power density in the step of forming the second semiconductor film is 0.137 W/cm2 to 6.847 W/cm2.
A method for manufacturing a semiconductor device comprising:
- forming an amorphous semiconductor film over an insulating surface;
- adding a metal element to the amorphous semiconductor film;
- crystallizing the amorphous semiconductor film to form a crystallized semiconductor film;
- forming a barrier layer on the crystallized semiconductor film by using a solution in which nitric acid is mixed with hydrogen peroxide;
- forming a second semiconductor film comprising an inert gas element on the barrier layer by a sputtering method;
- performing a gettering of the metal element into the semiconductor film to remove or reduce the metal element in the crystallized semiconductor film;
- and
- removing the semiconductor film,
- wherein a concentration of the inert gas element in the semiconductor film is with a range from 1×1019/cm3 to 1×1022/cm3,
- wherein a compression stress in the semiconductor film is with a range from −10.0×1010 dynes/cm2 to −5.0×109 dynes/cm2, and
- wherein an RF electric power density in the step of forming the semiconductor film is 0.137 W/cm2 to 6.847 W/cm2.
Dependencies are inferred from the claim text.