Gettering method and a wafer using the same
AssigneeOkmetic Oyj
InventorJari Mäkinen
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Abstract
It is shown in the invention a method for manufacturing a semiconductor wafer structure with an active layer for impurity removal, which method comprises phases of depositing a first layer on a first wafer surface for providing an active layer, an optional phase of preparation for said first layer for next phase, growing thermal oxide layer on a second wafer, bonding said first and second wafers into a stack, annealing the stack for a crystalline formation in said thermal oxide layer as a second layer, and thinning said first wafer to a pre-determined thickness. The invention concerns also a wafer manufactured according to the method, chip that utilizes such a wafer structure and an electronic device utilizing such a chip.
Claims46
A method for manufacturing a semiconductor wafer structure, the method comprising:
- depositing a polysilicon layer or an amorphous silicon layer, which is at least 0.2 μm thick, on a surface of a first wafer in order to provide a gettering layer capable of providing trapping sites for mobile impurity species;
- growing an oxide layer on a surface of a second wafer;
- bonding the polysilicon layer or the amorphous silicon layer of the first wafer to the oxide layer of the second wafer to form a wafer stack;
- and
- thinning the first wafer to obtain the semiconductor wafer structure.
A semiconductor wafer structure manufactured by a method comprising:
- depositing a polysilicon layer or an amorphous silicon layer, which is at least 0.2 μm thick, on a surface of a first wafer in order to provide a gettering layer capable of providing trapping sites for mobile impurity species;
- growing an oxide layer on a surface of a second wafer;
- bonding the polysilicon layer or the amorphous silicon layer of the first wafer to the oxide layer of the second wafer to form a wafer stack;
- and
- thinning the first wafer to obtain the semiconductor wafer structure.
A method comprising:
- using a polysilicon layer as an anti-stiction layer in a semiconductor wafer structure, wherein the semiconductor wafer structure comprises,
- a first wafer,
- the polysilicon layer, which is at least 0.2 μm thick, on a surface of the first wafer in order to provide a gettering layer capable of providing trapping sites for mobile impurity species,
- a second wafer, and
- an oxide layer on a surface of the second wafer, wherein the polysilicon layer of the first wafer is bonded to the oxide layer of the second wafer to form a wafer stack.
A method comprising:
- using a polysilicon layer being a gettering layer as an active layer in a semiconductor wafer structure, wherein the semiconductor wafer structure comprises,
- a first wafer,
- the polysilicon layer, which is at least 0.2 μm thick, on a surface of the first wafer in order to provide the gettering layer capable of providing trapping sites for mobile impurity species,
- a second wafer, and
- an oxide layer on a surface of the second wafer, wherein the polysilicon layer of the first wafer is bonded to the oxide layer of the second wafer to form a wafer stack.
A method comprising:
- gettering an impurity from at least one of a second layer on a second substrate, the second substrate, and a first substrate, of a wafer stack structure,
- wherein the wafer stack structure is formed by respectively depositing a first layer on the first substrate and the second layer on the second substrate, and bonding the first and second substrates along respective first and second surfaces to form the wafer stack structure, from which the second substrate is at least partly thinned away, and the first layer comprises polysilicon arranged to getter the impurity from the at least one of the second layer on the second substrate, the second substrate, and the first substrate.
A semiconductor device comprising:
- a semiconductor wafer structure, wherein the semiconductor wafer structure is manufactured by a method comprising:
- depositing a polysilicon layer or an amorphous silicon layer, which is at least 0.2 μm thick, on a surface of a first wafer in order to provide a gettering layer capable of providing trapping sites for mobile impurity species;
- growing an oxide layer on a surface of a second wafer;
- bonding the polysilicon layer or the amorphous silicon layer of the first wafer to the oxide layer of the second wafer to form a wafer stack;
- and
- thinning the first wafer to a pre-determined thickness to obtain the semiconductor wafer structure.
Dependencies are inferred from the claim text.