Thermal treatment equipment and method for heat-treating

A method for manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film over a substrate;
• introducing a crystallization promoting material to the semiconductor film;
• applying a first gas to the semiconductor film in a first room to heat the semiconductor film;
• applying a second gas to the semiconductor film in a second room to crystal the semiconductor film after applying the first gas;
• applying a third gas to the crystalline semiconductor film in a third room to cool the crystalline semiconductor film,
• forming an insulating film on the crystalline semiconductor film;
• forming an amorphous semiconductor film on the insulating film;
• and
• applying a fourth gas to the crystallization semiconductor film to getter the crystallization promoting material from the crystalline semiconductor film thereby the crystallization promoting material diffuses into the amorphous semiconductor film though the insulating film,
• wherein a temperature of the first gas is higher than a temperature of the third gas, and
• wherein a temperature of the second gas is higher than the temperature of the first gas.

A method for manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor film over a substrate;
• introducing a crystallization promoting material to the semiconductor film;
• applying a first gas to the semiconductor film in a preparatory heating room to heat the semiconductor film;
• applying a second gas to the semiconductor film in a process room to crystal the semiconductor film after applying the first gas;
• applying a third gas to the crystalline semiconductor film in the process room to cool the crystalline semiconductor film;
• applying a fourth gas to the crystalline semiconductor film in a cooling room to cool the crystalline semiconductor film;
• and
• applying a fifth gas to the crystalline semiconductor film to getter the crystallization promoting material from the crystalline semiconductor film,
• wherein a temperature of the first gas is higher than a temperature of the fourth gas, and
• wherein a temperature of the second gas and a temperature of the fifth gas are higher than the temperature of the first gas and a temperature of the fourth gas.