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US 7,923,350 B2Granted
Method of manufacturing a semiconductor device including etching to etch stop regions
AssigneeInfineon Technologies AG
InventorsJoachim Mahler, Edward Fuergut, Werner Kroeninger
Life of this patent
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Abstract
A method of manufacturing a semiconductor device. The method includes providing a wafer having a first face and a second face opposite the first face, selectively doping the wafer via the first face to selectively form etch stop regions in the wafer and etching the wafer at the second face to the etch stop regions.
Claims11
A method of manufacturing a semiconductor device, comprising:
- providing a wafer having a first face and a second face opposite the first face;
- selectively doping the wafer via the first face to selectively form etch stop regions in the wafer, wherein selectively doping the wafer comprises:
- accelerating ions toward the first face of the wafer to selectively form etch stop regions that are between the first face and the second face and not on the first face;
- providing active areas on the first face of the wafer;
- attaching the wafer at the first face to a wafer carrier;
- etching the wafer at the second face to the etch stop regions;
- and
- removing, from the wafer carrier, a semiconductor device that includes one of the active areas at a first outward facing face of the semiconductor device and one of the etch stop regions at a second outward facing face of the semiconductor device.
5 more elements
A method of manufacturing a semiconductor device comprising:
- providing a wafer having an array of active areas on a first face of the wafer that is opposite a second face of the wafer;
- selectively doping the wafer to form etch stop regions substantially between the active areas and the second face;
- attaching the wafer at the first face to a wafer carrier;
- etching the wafer until the active areas are singulated from the wafer;
- and
- removing, from the wafer carrier, a singulated semiconductor device that includes one of the active areas at a first outward facing face of the semiconductor device and one of the etch stop regions at a second outward facing face of the semiconductor device.
3 more elements
Dependencies are inferred from the claim text.