Semiconductor device and manufacturing method thereof

A method of manufacturing a semiconductor device, comprising:

• forming a metal layer over a substrate;
• removing a portion of the metal layer formed over a peripheral portion of the substrate;
• forming an oxide layer in contact with the metal layer;
• forming a layer to be peeled including a semiconductor element over the oxide layer;
• bonding a support to the layer to be peeled;
• and
• peeling the layer to be peeled after bonding the support.

A method of manufacturing a semiconductor device, comprising:

• forming a metal layer over a substrate;
• removing a portion of the metal layer formed over a peripheral portion of the substrate;
• forming an oxide layer in contact with the metal layer;
• forming a layer to be peeled including a thin film transistor and a first electrode connected electrically to the thin film transistor over the oxide layer;
• peeling the layer to be peeled after forming the layer to be peeled;
• forming a layer including an organic compound by evaporation over the first electrode;
• and
• forming a second electrode over the layer including the organic compound.