Capacitor of semiconductor device and method for forming the same
AssigneeHynix Semiconductor Inc.
InventorByung Soo Eun
Life of this patent
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Abstract
A method for forming a capacitor of a semiconductor device includes forming a cylindrical storage node over a semiconductor substrate; depositing a first dielectric layer over the cylindrical storage node; and etching the first dielectric layer to reduce a thickness of a portion of the first dielectric layer on a protruded end of the cylindrical storage node. The method further includes depositing a second dielectric layer over the etched first dielectric layer, wherein the second dielectric layer supplements a thickness of a portion of the first dielectric layer on a bottom corner of the cylindrical storage node. Finally, a cell plate is formed over the second dielectric layer.
Claims20
A method for forming a capacitor of a semiconductor device, the method comprising:
- forming a cylindrical storage node over a semiconductor substrate;
- depositing a first dielectric layer over the cylindrical storage node;
- etching the first dielectric layer to reduce a thickness of a portion of the first dielectric layer on a protruded end of the cylindrical storage node;
- depositing a second dielectric layer over the etched first dielectric layer, wherein the second dielectric layer supplements a thickness of a portion of the first dielectric layer on a bottom corner of the cylindrical storage node;
- and
- forming a cell plate over the second dielectric layer.
A method for forming a capacitor of a semiconductor device, the method comprising:
- forming a cylindrical storage node over a semiconductor substrate;
- depositing a first dielectric layer over the cylindrical storage node;
- etching the first dielectric layer to expose a surface of a protruded end of the cylindrical storage node;
- depositing a second dielectric layer over the etched first dielectric layer and the protruded exposed surface of the end of the cylindrical storage node;
- and
- forming a cell plate over the second dielectric layer.
A method for forming a capacitor of a semiconductor device, the method comprising:
- forming a cylindrical storage node over a semiconductor substrate;
- depositing a first dielectric layer over the cylindrical storage node;
- etching the first dielectric layer to reduce a thickness of a portion of the first dielectric layer on a protruded end of the cylindrical storage node;
- depositing a second dielectric layer over the etched first dielectric layer, wherein the second dielectric layer supplements a thickness of a portion of the first dielectric layer on a bottom corner of the cylindrical storage node;
- forming an adhesion layer comprising titanium zirconium nitride (TiZrN) over the second dielectric layer;
- and
- forming a cell plate comprising a ruthenium (Ru) layer over the adhesion layer.
A method for forming a capacitor of a semiconductor device, the method comprising:
- forming a cylindrical storage node over a semiconductor substrate;
- depositing a dielectric layer over the cylindrical storage node;
- forming an adhesion layer comprising titanium zirconium nitride (TiZrN) over the dielectric layer;
- and
- forming a cell plate comprising a ruthenium (Ru) layer over the adhesion layer.
A capacitor of a semiconductor device comprising:
- a cylindrical storage node formed over a semiconductor substrate;
- a dielectric layer formed over the cylindrical storage node;
- an adhesive layer formed comprising titanium zirconium nitride (TiZrN) over the dielectric layer;
- and
- a cell plate comprising a ruthenium (Ru) layer over the adhesion layer.
Dependencies are inferred from the claim text.