High-k dielectric film, method of forming the same and related semiconductor device
AssigneeInfineon Technologies AG
InventorsKil-Ho Lee, Chan Lim
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Abstract
A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.
Claims10
A method of forming a high-k dielectric film, the method comprising:
- a) forming a metal-silicon-oxynitride bottom layer on a substrate, the bottom layer having a first nitrogen content and a first silicon content;
- b) forming a metal-silicon-oxynitride top layer on the bottom layer, the top layer having a second nitrogen content and a second silicon content, the second nitrogen content higher than the first nitrogen content and the second silicon content higher than the first silicon content.
A method of forming a high-k dielectric film, the method comprising:
- a) forming a metal-silicon-oxide pre-bottom layer on a substrate, the pre-bottom layer having a first silicon content;
- b) forming a metal-silicon-oxide pre-top layer on the pre-bottom layer, the pre-top layer having a second silicon content higher than the first silicon content;
- and
- c) performing N2 plasma treatment to convert the pre-bottom layer to a metal-silicon-oxynitride bottom layer having a first nitrogen content and the pre-top layer to a metal-silicon-oxynitride top layer having a second nitrogen content higher than the first nitrogen content.
Dependencies are inferred from the claim text.