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US 7,923,333 B2Granted
Semiconductor device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorSang-Hyun Lee
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes forming a trench in a substrate, forming a gate electrode buried over the trench to form a buried gate pattern, etching portions of the substrate on both sides of the buried gate pattern to a certain depth, performing an ion implantation process on the substrate to form source/drain junctions, and forming metal patterns over the source/drain junctions.
Claims10
A method for fabricating a semiconductor device, comprising:
- forming a trench in a substrate;
- forming a gate electrode buried over the trench to form a buried gate pattern;
- etching portions of the substrate on both sides of the buried gate pattern to a certain depth;
- performing an ion implantation process on the etched portions of the substrate to form source/drain junctions;
- forming a metal layer over the substrate structure including the source/drain junctions;
- and
- planarizing the metal layer until a surface of the buried gate pattern is exposed to form metal patterns over the source/drain junctions.
4 more elements
A method for fabricating a semiconductor device, comprising:
- forming a buried oxide layer in a substrate;
- forming a trench over the buried oxide layer in the substrate;
- forming a gate electrode buried over the trench to form a buried gate pattern;
- etching portions of the substrate on both sides of the buried gate pattern to a certain depth;
- forming a metal layer over the substrate structure including source/drain junctions;
- and
- planarizing the metal layer until a surface of the buried gate pattern is exposed to form metal patterns over the source/drain junctions.
4 more elements
Dependencies are inferred from the claim text.