Method for manufacturing a semiconductor device
AssigneeInfineon Technologies Austria AG
InventorHans Martin Weber
Life of this patent
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Abstract
A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a first surface and a second surface which is arranged opposite to the first surface. The semiconductor substrate includes a plurality of trench structures extending from the first surface into the semiconductor substrate. The thickness of the semiconductor substrate is then reduced by removing semiconductor material at the second surface to obtain a processed second surface with exposed bottom portions of the trench structures. At least a first mask is formed on the processed second surface in a self-aligned manner with respect to the bottom portions of the trench structures, and doping regions are formed in the semiconductor substrate between the trench structures.
Claims20
A method for manufacturing a semiconductor device, comprising:
- providing a semiconductor substrate comprising a first surface and a second surface which is arranged opposite to the first surface, the semiconductor substrate comprising a plurality of trench structures extending from the first surface into the semiconductor substrate;
- reducing the thickness of the semiconductor substrate by removing semiconductor material at the second surface to obtain a processed second surface with exposed bottom portions of the trench structures;
- forming at least a first mask on the processed second surface in a self-aligned manner with respect to the bottom portions of the trench structures;
- and
- forming doping regions in the semiconductor substrate between the trench structures.
A method for manufacturing a semiconductor device, comprising:
- providing a semiconductor substrate comprising a first surface and a second surface which is arranged opposite to the first surface, the semiconductor substrate comprising a plurality of trench structures extending from the first surface into the semiconductor substrate;
- reducing the thickness of the semiconductor substrate by removing semiconductor material at the second surface to obtain a processed second surface with exposed bottom portions of the trench structures;
- forming at least a first mask on the processed second surface in a self-aligned manner with respect to the bottom portions of the trench structures;
- implanting a first dopant into the semiconductor material at the processed second surface to form doping regions between the trench structures;
- removing the first mask;
- and
- implanting a second dopant into the semiconductor substrate at the processed second surface.
A method for manufacturing a semiconductor device, comprising:
- providing a semiconductor substrate comprising a first surface and a second surface which is arranged opposite to the first surface, the semiconductor substrate comprising a plurality of trench structures extending from the first surface into the semiconductor substrate;
- reducing the thickness of the semiconductor substrate by removing semiconductor material at the second surface to obtain a processed second surface with exposed bottom portions of the trench structures;
- forming at least a first mask on the processed second surface in a self-aligned manner with respect to the bottom portions of the trench structures;
- etching selectively the semiconductor material at the processed second surface with respect to the first mask;
- removing the first mask;
- and
- implanting a dopant into the semiconductor material at the processed second surface to form doping regions between the trench structures.
Dependencies are inferred from the claim text.