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US 7,923,329 B2Granted
Method for manufacturing a semiconductor device
AssigneeHynix Semiconductor Inc.
InventorKeun Do Ban
Life of this patent
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Abstract
A method for manufacturing a semiconductor device includes forming a spin-on-carbon (SOC) film that facilitates a low temperature baking process, can prevent collapse of vertical transistors while forming a bit line, thereby providing a more simple manufacturing method and improving manufacturing yields.
Claims13
A method for manufacturing a semiconductor device, the method comprising:
- forming vertical transistors in a semiconductor substrate;
- forming a spin-on-carbon (SOC) film filling a gap between the vertical transistors over the semiconductor substrate;
- forming a hard mask pattern over the semiconductor substrate, including over the vertical transistors and the SOC film;
- baking the SOC film to make a surface of the SOC film smooth without a Chemical Mechanical Polishing (CMP) process;
- etching the SOC film and the semiconductor substrate under the SOC film with the hard mask pattern as a mask to form a bit line trench, wherein a residual SOC film remains on at least a portion of the bit line trench;
- removing the hard mask pattern;
- and
- performing an implant process to form a bit line in a portion of the substrate where the bit line trench contacts the vertical transistors using the residual SOC film as an implant mask.
5 more elements
Dependencies are inferred from the claim text.