Method of forming a capacitor
AssigneeMicron Technology, Inc.
InventorsMichael Nuttall, Er-Xuan Ping, Yongjun Jeff Hu
Life of this patent
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Abstract
A method of forming a capacitor includes forming a first capacitor electrode over a substrate. A substantially crystalline capacitor dielectric layer is formed over the first capacitor electrode. The substrate with the substantially crystalline capacitor dielectric layer is provided within a chemical vapor deposition reactor. Such substrate has an exposed substantially amorphous material. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the substantially crystalline capacitor dielectric layer relative to the exposed substantially amorphous material, and the polysilicon is formed into a second capacitor electrode.
Claims21
A method of forming a capacitor comprising:
- forming a first capacitor electrode and substantially amorphous material over a substrate, the substantially amorphous material being separate from and not constituting a portion of the first capacitor electrode;
- forming a substantially crystalline capacitor dielectric layer over the first capacitor electrode and the substantially amorphous material;
- outwardly exposing an elevationally outer surface of the substantially amorphous material;
- providing the substrate with substantially crystalline capacitor dielectric layer and the substantially amorphous material having the exposed elevationally outer surface within a chemical vapor deposition reactor;
- and
- while the elevationally outer surface of the substantially amorphous material is outwardly exposed, feeding a gaseous precursor comprising silicon to the chemical vapor deposition reactor under conditions which substantially selectively deposit polysilicon on the substantially crystalline capacitor dielectric layer relative to the outwardly exposed elevationally outer surface of the substantially amorphous material, and forming the polysilicon into a second capacitor electrode.
Dependencies are inferred from the claim text.