HBT and field effect transistor integration
AssigneeMicroLink Devices, Inc.
InventorsNoren Pan, Andree Wibowo
Life of this patent
Estimating the term…
Abstract
Methods and systems for fabricating an integrated BiFET using two separate growth procedures are disclosed. Performance of the method fabricates the FET portion of the BIFET in a first fabrication environment. Performance of the method fabricates the HBT portion of the BiFET in a second fabrication environment. By separating the fabrication of the FET portion and the HBT portion in two or more separate reactors, the optimum device performance can be achieved for both devices.
Claims24
A method of fabricating a BiFET device, the method comprising the steps of:
- loading a substrate into a first fabrication environment;
- forming a FET portion of the BiFET device on the substrate in the first fabrication environment;
- removing the substrate from the first fabrication environment after formation of the FET portion of the BiFET device;
- loading the substrate in a second fabrication environment;
- and
- forming a HBT portion of the BiFET device on the substrate in the second fabrication environment, wherein the temperature is lowered to between 30° C. and 100° C. during the forming of the HBT portion of the BiFET device.
A method of fabricating a BiFET device, the method comprising the steps of:
- loading a substrate into a first fabrication environment;
- forming a FET portion of the BiFET device on the substrate in the first fabrication environment;
- removing the substrate from the first fabrication environment after formation of the FET portion of the BiFET device;
- loading the substrate in a second fabrication environment;
- and
- forming a HBT portion of the BiFET device on the substrate in the second fabrication environment,
- wherein the temperature is lowered during the forming of the HBT portion of the BiFET device, and
- wherein the temperature during an oxide desorb process is lowered by at least 50° C. prior to the growth of a subcollector region.
Dependencies are inferred from the claim text.